Generalization of Carré equation

The present work offers new equations for phase evaluation in measurements. Several phase shifting equations with an arbitrary but constant phase shift between captured intensity signs are proposed. The equations are similarly derived as the so-called Carré equation. The idea is to develop a generalization of Carré equation that is not restricted to four images. Errors and random noise in the images cannot be eliminated, but the uncertainty due to their effects can be reduced by increasing the number of observations. An experimental analysis of the mistakes of the technique was made, as well as a detailed analysis of mistakes of the measurement. The advantages of the proposed equation are its precision in the measures taken, speed of processing and the immunity to noise in signs and images.     

Formulation of moiré fringes based on spatial averaging

The use of moiré technique in measurements often involves locating the position of moiré fringe and in some cases determining its profile. Due to intensity fluctuation in the fringe pattern, these measurements are accompanied by some errors. It is possible to define a smoothed version of the original fringe pattern and then formulate the related subject in accordance with the characteristics of this new pattern. This procedure reduces these types of errors and gives a well-defined profile of the fringes. In this paper a formulation of moiré phenomenon based on spatial averaging is presented which, without ignoring any of frequencies, leads to a smooth profile.     

A comparative study of dispersion relation of EM waves in ternary one-dimensional plasma photonic crystals having two different structures

In this paper, a rigorous theoretical analysis has been made to study the dispersion relation of EM waves in periodic ternary one-dimensional photonic crystal having two different structures. In one case we have chosen glass-plasma and ZnS in one unit cell and in other case we have considered glass-plasma and M_gF₂ in one unit cell. Using Kronig-Penney model the dispersion relation for proposed structures has been obtained and numerical results are presented in the form of dispersion curves. The dependence of photonic band gap (PBG) characteristics on plasma frequency, plasma width and the width of dielectric media are discussed in the light of frequency gap and cutoffs of binary one-dimensional plasma photonic crystal. An attempt has been made to show how the PBG characteristic of a particular structure changes when the dielectric materials of its unit cell is changed by the other dielectric material. It is found that the structure having glass-plasma-ZnS in unit cell is more useful for broad band filtering and other plasma functioning devices compared to the structure having glass-plasma-MgF₂ in one unit cell.     

Directional coupler design based on coupled cavity waveguides in photonic crystals

We propose a directional coupler design based on coupled cavity waveguide in photonic crystals. The plane wave expansion is used to give the dispersion of the coupled cavity waveguides and two parallel such waveguides. The couple length is got from the dispersion curves. Based on the research of the dispersion, we present a directional coupler and the transmission property is given. This structure is potentially important for highly efficient directional coupler in integrate optical circuit.     

Formation of GaAs1−xNx nanofilm on GaAs by low energy N2 implantation

Nitridation of GaAs (1 0 0) by N₂⁺ ions with energy E_i = 2500 eV has been studied by Auger- and Electron Energy Loss Spectroscopy under experimental conditions, when electrons ejected only by nitrated layer, without contribution of GaAs substrate, were collected. Diagnostics for quantitative chemical analysis of the nitrated layers has been developed using the values of NKVV Auger energies in GaN and GaAsN chemical phases measured in one experiment, with the accuracy being sufficient for separating their contributions into the experimental spectrum. The conducted analysis has shown that nanofilm with the thickness of about 4 nm was fabricated, consisting mainly of dilute alloy GaAs_1−xN_x with high concentration of nitrogen x ∼ 0.09, although the major part of the implanted nitrogen atoms are contained in GaN inclusions. It was assumed that secondary ion cascades generated by implanted ions play an important role in forming nitrogen-rich alloy.     

Structural and optical properties of Au-implanted ZnO films

The structural and luminescence related optical behaviours of Au ion implanted ZnO films grown by magnetic sputtering and their post implantation annealing behaviours in the temperature range of 100-700 °C have been investigated. Optical absorption and transmittance spectra of the films indicate that band edge of Au-implanted ZnO has shifted to high energy range and optical band gap has increased, because the sharp difference of thermal expansion induces the lattice mismatch between ZnO and SiO₂. PL spectra reveal that UV and visible luminescence bands of ZnO films can be improved after thermal annealing due to recovery of defects and Au ions incorporation. Importantly, green luminescence band of 530 nm has been only observed in the Au-implanted and subsequently annealed ZnO films and it enhances with the increasing annealing temperature, which can be related to Au atoms or clusters in ZnO films. Furthermore, X-ray photoelectron spectroscopy measurements reveal that the Au⁰ is dominant state in Au implanted and annealed ZnO films. Possible mechanisms, such as optical transitions of Au atoms or clusters and deep level luminescence of ZnO, have been proposed for green emission.     

Cr-doping induced ferromagnetic behavior in antiferromagnetic EuTiO3 nanoparticles

We have synthesized a series of high quality EuTi_1−xCr_xO₃ (x = 0.0, 0.02, and 0.04) nanoparticles by simple sol-gel technique. The averaged grain size of these obtained nanoparticles displays no obvious change with Cr-doping and is about 100 nm. The structural and magnetic properties of EuTi_1−xCr_xO₃ (x = 0.0, 0.02, and 0.04) samples were detailedly investigated. It is found that the G-antiferromagnetic (G-AFM) ordering of pure EuTiO₃ can be significantly modified with slight Cr-doping, and finally the ferromagnetic behavior is enhanced for EuTi_1−xCr_xO₃ system with Cr-doping.     

Effect of growth time on the structure, Raman shift and photoluminescence of Al and Sb codoped ZnO nanorod ordered array thin films

Al and Sb codoped ZnO nanorod ordered array thin films have been deposited on glass substrate with a ZnO seed layer by hydrothermal method at different growth time. The effect of growth time on structure, Raman shift, and photoluminescence (PL) was studied. The thin films at growth time of 5 h consist of nanorods growth vertically oriented with ZnO seed layer, and the nanorods with an average diameter of 27.8 nm and a length of 1.02 μm consist of single crystalline wurtzite ZnO crystal and grow along [0 0 1] direction. Raman scattering analysis demonstrates that the thin films at the growth time of 5 h have great Raman shift of 15 cm⁻¹ to lower wavenumber and have low asymmetrical factor Г_a/Г_b of 1.17. Room temperature photoluminescence reveals that there is more donor-related PL in films with growth time of 5 h.     

Synthesis and characterization of β-Ga2O3 nanostructures grown on GaAs substrates

β-Ga₂O₃ nanostructures including nanowires, nanoribbons and nanosheets were synthesized via thermal annealing of gold coated GaAs substrates in N₂ ambient. GaAs substrates with different dopants were taken as the starting material to study the effect of doping on the growth and photoluminescence properties of β-Ga₂O₃ nanostructures. The nanostructures were investigated by Grazing Incident X-ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy, room temperature photoluminescence and optical absorbance. The selected area electron diffraction and High resolution-TEM observations suggest that both nanowires and nanobelts are single crystalline. Different growth directions were observed for nanowires and nanoribbons, indicating the different growth patterns of these nanostructures. The PL spectra of β-Ga₂O₃ nanostructures exhibit a strong UV-blue emission band centered at 410 nm, 415 nm and 450 nm for differently doped GaAs substrates respectively. A weak red luminescence peak at 710 nm was also observed in all the samples. The optical absorbance spectrum showed intense absorption features in the UV spectral region. The growth and luminescence mechanism in β-Ga₂O₃ nanostructures are also discussed.     

Density functional study of TaSin (n = 1-3, 12) clusters adsorbed to graphene surface

A plane-wave density functional theory (DFT) calculations have been performed to investigate structural and electronic properties of TaSi_n (n = 1-3, 12) clusters supported by graphene surface. The resulting adsorption structures are described and discussed in terms of stability, bonding, and electron transfer between the cluster and the graphene. The TaSi_n clusters on graphene surface favor their free-standing ground-state structures. Especially in the cases of the linear TaSi₂ and the planar TaSi₃, the graphene surface may catalyze the transition of the TaSi_n clusters from an isomer of lower dimensionality into the ground-state structure. The adsorption site and configuration of TaSi_n on graphene surface are dominated by the interaction between Ta atom and graphene. Ta atom prefers to adsorb on the hollow site of graphene, and Si atoms tend to locate on the bridge site. Further, the electron transfer is found to proceed from the cluster to the surface for n = 1 and 2, while its direction reverses as n > 2. For the case of TaSi, chemisorption is shown to prevail over physisorption as the dominant mode of surface-adsorbate interaction by charge density analysis.